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Lecture 1 – Introduction to Basic Concepts |
Electrical Engineering |
57 min |
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Lecture 2-Requirements of High Speed Devices, Circuits & Mat |
Electrical Engineering |
58 min |
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Lecture-3-Classifications & Properties of Compound Semicond |
Electrical Engineering |
57 min |
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Lecture4-Temary Compound Semiconductor and their Application |
Electrical Engineering |
57 min |
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Lecture5-Temary Compound Semiconductor and their Appl – 2 |
Electrical Engineering |
57 min |
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Lecture 6 – Crystal Structures in GaAs |
Electrical Engineering |
57 min |
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Lecture 7 – Dopants and impurities in GaAs and InP |
Electrical Engineering |
58 min |
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Lecture 8- Brief Overview of GaAs Technology for High Speed |
Electrical Engineering |
57 min |
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Lecture 9 – Epitaxial Techniques for GaAs High Speed Devices |
Electrical Engineering |
57 min |
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Lecture 10 – MBE and LPE for GaAs Epitaxy |
Electrical Engineering |
57 min |
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Lecture 11 – GaAs and InP Devices for Microelectronics |
Electrical Engineering |
57 min |
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Lecture 12 – Metal Semiconductor contacts for MESFET |
Electrical Engineering |
57 min |
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Lecture13- Metal Semiconductor contacts for MESFET (Contd.) |
Electrical Engineering |
58 min |
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Lecture14- Metal Semiconductor contacts for MESFET (Contd.) |
Electrical Engineering |
58 min |
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Lecture 15 – Ohmic Contacts on Semiconductors |
Electrical Engineering |
58 min |
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Lecture 16 – Fermi Level Pinning & Schottky Barrier Diodes |
Electrical Engineering |
57 min |
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Lecture 17 – Schottky Barrier Diode |
Electrical Engineering |
57 min |
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Lecture 18 – Schottky Barrier Diodes |
Electrical Engineering |
56 min |
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Lecture 19 -Causes of Non-Idealities-Schottky Barrier Diodes |
Electrical Engineering |
57 min |
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Lecture 20 – MESFET Operation & I-V Characteristics |
Electrical Engineering |
57 min |
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Lecture 21 – MESFET I-V Characteristics Shockleys Model |
Electrical Engineering |
56 min |
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Lecture 22 – MESFET Shockleys Model and Velocity saturation |
Electrical Engineering |
58 min |
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Lecture 23- MESFET Velocity Saturation effect |
Electrical Engineering |
57 min |
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Lecture 24 -MESFET Drain Current Saturation |
Electrical Engineering |
57 min |
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Lecture 25 – MESFET Effects of Channel Length |
Electrical Engineering |
57 min |
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Lecture 26 – MESFET: Effects of Velocity Saturation |
Electrical Engineering |
58 min |
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Lecture 27 – Velocity Field Characteristics |
Electrical Engineering |
57 min |
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Lecture-28-MESFET-SAINT |
Electrical Engineering |
57 min |
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Lecture-29-SELF Aligned MESFET-SAINT |
Electrical Engineering |
57 min |
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Lecture-30-Hetero Junctions |
Electrical Engineering |
57 min |
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Lecture-32-Hetero Junctions&HEMT(Contd) |
Electrical Engineering |
57 min |
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Lecture-33-High Electron Mobility Transistor |
Electrical Engineering |
57 min |
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Lecture-34-HEMT-off Voltage |
Electrical Engineering |
57 min |
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Lecture-35-HEMT 1-V Characteristics and Transconductance |
Electrical Engineering |
58 min |
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Lecture-36-Indium Phosphide Based HEMT |
Electrical Engineering |
58 min |
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Lecture-37-Pseudomorphic HEMT |
Electrical Engineering |
55 min |
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Lecture-38-Hetrojunction Bipolar Transistors(HBT) |
Electrical Engineering |
55 min |
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Lecture-39-Hetrojunction Bipolar Transistors(HBT)-2(Contd) |
Electrical Engineering |
57 min |
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Lecture-40-Hetrojunction Bipolar Transistors(HBT)-3(Contd) |
Electrical Engineering |
57 min |
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Lecture-41-Hetrojunction Bipolar Transistors(HBT)-4(Contd) |
Electrical Engineering |
56 min |
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Lecture – 31 Hetro Junctions and HEMT |
Electrical Engineering |
56 min |
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